Feng Yan
1Patents
1Active
1Granted
39Portfolio score
Filing activity: Feb 10, 2010 → Feb 10, 2010 · 1 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8604409B2 | Photosensitive detector with composite dielectric gate MOSFET structure and its signal readout method | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.