Nagoya University and Research Development Corporation of Japan
1Patents
0Active
1Granted
25Portfolio score
Filing activity: Feb 26, 1990 → Feb 26, 1990
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5122845A | Substrate for growing gallium nitride compound-semiconductor device and light emitting diode | Electricity | 137 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.