Naoetsu Electronics Co., Ltd.
11Patents
0Active
11Granted
27Portfolio score
Filing activity: Apr 2, 1982 → Oct 21, 2005
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4433510A | Method for controlling thickness of wafer-like work pieces under lapping and a lapping machine therefor | Physics | 29 | Expired |
| US5240882A | Process and apparatus for making discrete type substrates by re-slicing a wafer | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6066562A | Method for fabricating silicon semiconductor discrete wafer | Electricity | 16 | Expired |
| US5045505A | Method of processing substrate for a beveled semiconductor device | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5142756A | Apparatus for loading and re-slicing semiconductor wafer | Electricity | 9 | Expired |
| US6332833A | Method for fabricating silicon semiconductor discrete wafer | Electricity | 7 | Expired |
| US7700400B2 | Back junction solar cell and process for producing the same | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5472909A | Method for the preparation of discrete substrate plates of semiconductor silicon wafer | Electricity | 4 | Expired |
| US5154873A | Method and apparatus for mounting slice base on wafer of semiconductor | Electricity | 3 | Expired |
| US6090720A | Wet etching method for silicon semiconductor wafer | Electricity | 2 | Expired |
| US6093648A | Production method for a discrete structure substrate | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.