SOITEC SA
2Patents
1Active
2Granted
36Portfolio score
Filing activity: Jun 2, 2000 → Dec 27, 2019
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6372609B1 | Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method | Electricity | 270 | Expired |
| US11894830B2 | Surface acoustic wave device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.