Annie Levesque
7Patents
3h-index
17Co-inventors
46Inventor score
Filing activity: Apr 15, 2013 → Aug 22, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10204984B1 | Methods, apparatus and system for forming increased surface regions within EPI structures for improved trench silicide | Electricity | 3 | Active |
| US9673295B2 | Contact resistance optimization via EPI growth engineering | Electricity | 3 | Active |
| US9349650B2 | Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs | Electricity | 3 | Active |
| US9349649B2 | Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs | Electricity | 1 | Active |
| US9752251B2 | Self-limiting selective epitaxy process for preventing merger of semiconductor fins | Chemistry; Metallurgy | 1 | Active |
| US9536989B1 | Field-effect transistors with source/drain regions of reduced topography | Electricity | 0 | Active |
| US10886178B2 | Device with highly active acceptor doping and method of production thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.