Inventor · Singapore, SG

Arthur Khoon Siah Aug

1Patents
1h-index
2Co-inventors
22Inventor score

Filing activity: Oct 10, 2000 → Oct 10, 2000

Most-cited inventions

PatentTitleAreaCited byStatus
US6284644A IMD scheme by post-plasma treatment of FSG and TEOS oxide capping layer Electricity 27 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.