Barry Ginsberg
2Patents
2h-index
7Co-inventors
37Inventor score
Filing activity: Jul 14, 1988 → Oct 24, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5059544A | Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy | Emerging Cross-Sectional Technologies | 27 | Expired |
| US7008803B2 | Method of reworking structures incorporating low-k dielectric materials | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.