Brian Schorr
4Patents
3h-index
7Co-inventors
43Inventor score
Filing activity: Sep 20, 2002 → Nov 2, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7015116B1 | Stress-relieved shallow trench isolation (STI) structure and method for forming the same | Electricity | 80 | Expired |
| US6791155B1 | Stress-relieved shallow trench isolation (STI) structure and method for forming the same | Electricity | 72 | Expired |
| US10170559B1 | Reverse conducting IGBT incorporating epitaxial layer field stop zone and fabrication method | Electricity | 5 | Active |
| US10686038B2 | Reverse conducting IGBT incorporating epitaxial layer field stop zone | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.