Derek C. Houghton
4Patents
4h-index
4Co-inventors
39Inventor score
Filing activity: May 4, 1995 → Feb 1, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6346453B1 | Method of producing a SI-GE base heterojunction bipolar device | Electricity | 45 | Expired |
| US5581639A | Raman-nath diffraction grating | Physics | 22 | Expired |
| US6559021B2 | Method of producing a Si-Ge base heterojunction bipolar device | Electricity | 8 | Expired |
| US6756604B2 | Si-Ge base heterojunction bipolar device | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.