Inventor · Kashima, JP

Fumio Ohtake

6Patents
4h-index
20Co-inventors
57Inventor score

Filing activity: Jul 3, 1985 → Jan 30, 2009

Most-cited inventions

PatentTitleAreaCited byStatus
US6939787B2 Method for fabricating semiconductor device having gate electrode with polymetal structure of polycrystalline silicon film and metal film Electricity 92 Expired
US5271197A Earthquake resistant multi-story building Fixed Constructions 31 Expired
US4597278A Method for producing I-beam having centrally corrugated web Fixed Constructions 16 Expired
US7315062B2 Semiconductor device, mask for impurity implantation, and method of fabricating the semiconductor device Electricity 5 Expired
US5110371A Aluminum alloys for forming colored anodic oxide films thereon and method for producing a sheet material of the alloy Chemistry; Metallurgy 4 Expired
US7856892B2 Flow-rate measuring method and flow-rate measuring device Physics 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.