Gonsub Lee
3Patents
2h-index
3Co-inventors
33Inventor score
Filing activity: Jun 13, 2005 → Apr 13, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7947572B2 | Method of manufacturing a SOI structure having a SiGe layer interposed between the silicon and the insulator | Electricity | 7 | Active |
| US7741193B2 | SOI structure having a SiGe layer interposed between the silicon and the insulator | Electricity | 2 | Expired |
| US7180138B2 | SOI structure having a SiGe layer interposed between the silicon and the insulator | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.