Guanshen Yang
6Patents
0h-index
6Co-inventors
24Inventor score
Filing activity: May 25, 2021 → Dec 22, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12074159B2 | Nitride-based semiconductor bidirectional switching device and method for manufacturing the same | Electricity | 0 | Active |
| US12087763B2 | Nitride-based semiconductor bidirectional switching device and method for manufacturing the same | Electricity | 0 | Active |
| US12218128B2 | Nitride-based semiconductor bidirectional switching device and method for manufacturing the same | Electricity | 0 | Active |
| US12125844B2 | Nitride-based semiconductor bidirectional switching device and method for manufacturing the same | Electricity | 0 | Active |
| US12062653B2 | Nitride-based semiconductor bidirectional switching device and method for manufacturing the same | Electricity | 0 | Active |
| US12176343B2 | Nitride-based semiconductor bidirectional switching device and method for manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.