Heqing DENG
3Patents
0h-index
8Co-inventors
27Inventor score
Filing activity: Dec 30, 2017 → Sep 7, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10600935B2 | Nitride based semiconductor device with improved lattice quality | Electricity | 0 | Active |
| US10418518B2 | Nitride underlayer and fabrication method thereof | Electricity | 0 | Active |
| US12369433B2 | Light-emitting structure, method for producing the light-emitting structure, and light-emitting device | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.