Hiromitsu Kudo
2Patents
1h-index
7Co-inventors
30Inventor score
Filing activity: Oct 19, 2007 → Feb 13, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8946772B2 | Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element | Electricity | 5 | Active |
| US8716728B2 | Nitride semiconductor light-emitting diode device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.