Hiroyuki Nihira
6Patents
4h-index
8Co-inventors
39Inventor score
Filing activity: Jul 29, 1988 → Jan 8, 1992
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4931409A | Method of manufacturing semiconductor device having trench isolation | Electricity | 50 | Expired |
| US5204276A | Method of manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 28 | Expired |
| US4908324A | Method of manufacturing bipolar transistor | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5096842A | Method of fabricating bipolar transistor using self-aligned polysilicon technology | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5100813A | Method of manufacturing bipolar transistor | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5244822A | Method of fabricating bipolar transistor using self-aligned polysilicon technology | Emerging Cross-Sectional Technologies | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.