Kousaka Yano
1Patents
1h-index
3Co-inventors
25Inventor score
Filing activity: Jul 7, 1997 → Jul 7, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5950101A | Method for manufacturing a semiconductor device involving forming two silicon oxide layers by CVD and forming HMDS between the silicon oxide layers | Electricity | 16 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.