Lichia Yang
1Patents
0h-index
6Co-inventors
19Inventor score
Filing activity: Feb 25, 2016 → Feb 25, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9991154B2 | Method for fabricating a fin field effect transistor and a shallow trench isolation | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.