Paul McCann
2Patents
2h-index
1Co-inventors
24Inventor score
Filing activity: Aug 29, 2003 → Dec 4, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6955988B2 | Method of forming a cavity and SOI in a semiconductor substrate | Electricity | 15 | Expired |
| US7153757B2 | Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.