Prashant Chavarkar
1Patents
1h-index
5Co-inventors
25Inventor score
Filing activity: Mar 19, 2002 → Mar 19, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6849882B2 | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer | Electricity | 211 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.