Tae-Kyung Ahn
46Patents
12h-index
43Co-inventors
81Inventor score
Filing activity: Mar 3, 1992 → Mar 1, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8148779B2 | Thin film transistor, method of manufacturing the same and flat panel display device having the same | Electricity | 575 | Active |
| US7994500B2 | Thin film transistor, method of manufacturing the same and flat panel display device having the same | Electricity | 548 | Active |
| US7199393B2 | Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same | Emerging Cross-Sectional Technologies | 73 | Expired |
| US8541258B2 | Thin film transistor, method of manufacturing the same and flat panel display device having the same | Electricity | 55 | Active |
| US8436342B2 | Organic light emitting display device and method of manufacturing the same | Electricity | 45 | Active |
| US9035313B2 | Thin film transistor, method of manufacturing the same and flat panel display device having the same | Electricity | 39 | Active |
| US7476487B2 | Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same | Emerging Cross-Sectional Technologies | 33 | Active |
| US8659016B2 | Thin film transistor, method of manufacturing the same and flat panel display device having the same | Electricity | 28 | Active |
| US7250082B2 | Alloy type semiconductor nanocrystals and method for preparing the same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6869864B2 | Method for producing quantum dot silicate thin film for light emitting device | Emerging Cross-Sectional Technologies | 27 | Expired |
| US8288768B2 | Thin film transistor, method of manufacturing the same, and flat panel display device having the same | Electricity | 15 | Active |
| US8376017B2 | Flexible substrate bonding and debonding apparatus | Emerging Cross-Sectional Technologies | 14 | Active |
| US8758864B2 | Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same | Emerging Cross-Sectional Technologies | 11 | Active |
| US7569248B2 | Method for preparing multilayer of nanocrystals, and organic-inorganic hybrid electroluminescence device comprising multilayer of nanocrystals prepared by the method | Emerging Cross-Sectional Technologies | 11 | Expired |
| US8017513B2 | Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor using the same and thin film transistor having semiconductor active layer | Electricity | 10 | Active |
| US8466465B2 | Thin film transistor having an oxide semiconductor bilayer, method of manufacturing the same and flat panel display device having the same | Electricity | 10 | Active |
| US5201450A | Heat block of wire bonding machine | Electricity | 9 | Expired |
| US8796679B2 | Thin film transistor having semiconductor active layer | Electricity | 7 | Active |
| US8911883B2 | Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same | Emerging Cross-Sectional Technologies | 7 | Active |
| US7468168B2 | Method of preparing cadmium sulfide nanocrystals emitting light at multiple wavelengths, and cadmium sulfide nanocrystals prepared by the method | Emerging Cross-Sectional Technologies | 6 | Active |
| US8633490B2 | Organic electroluminescence display and manufacturing method thereof | Electricity | 5 | Active |
| US7835001B2 | Method of aligning a substrate, mask to be aligned with the same, and flat panel display apparatus using the same | Electricity | 4 | Active |
| US8188650B2 | Method for preparing multilayer of nanocrystals, and organic-inorganic hybrid electroluminescence device comprising multilayer of nanocrystals prepared by the method | Emerging Cross-Sectional Technologies | 3 | Active |
| US7829189B2 | Alloy-type semiconductor nanocrystals | Emerging Cross-Sectional Technologies | 3 | Active |
| US8440480B2 | Method for fabricating an electroluminescence device | Emerging Cross-Sectional Technologies | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.