Wei-Lin Sun
1Patents
0h-index
4Co-inventors
19Inventor score
Filing activity: Dec 20, 2019 → Dec 20, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11127839B2 | Method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.