Yvonne Patton
1Patents
1h-index
6Co-inventors
25Inventor score
Filing activity: Dec 22, 2003 → Dec 22, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7018880B2 | Method for manufacturing a MOS transistor having reduced 1/f noise | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.