Method of laser direct synthesis of graphene
US10000384B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | May 30, 2013 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/18
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming single and few layer graphene on a quartz substrate in one embodiment includes providing a quartz substrate, melting a portion of the quartz substrate, diffusing a form of carbon into the melted portion to form a carbon and quartz mixture, and precipitating at least one graphene layer out of the carbon and quartz mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.