Systems and methods for carbon structures incorporating silicon carbide whiskers
US10000425B2 · kind B2 · utility
14Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Mar 21, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/616
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of treating a carbon structure is provided. The method may include infiltrating the carbon structure with a silicon compound preparation, heat treating the carbon structure to form a plurality of silicon carbide whiskers in the carbon structure, and/or densifying the carbon structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.