Patent · US Active

Method for fabricating a pressure sensor

US10001421B2 · kind B2 · utility

0Cited by

7References

14Claims

0Family size

Assignee

The Board of Regents of the University of Texas System · US

Inventors

Tushar Sharma · Arcadia, US
Xiaojing Zhang · Austin, US

Key dates

Filing date	Oct 24, 2014
Grant date	Jun 19, 2018
Priority date	—
Expiry date	Oct 24, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG01L9/08
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method of fabricating a pressure sensor is disclosed. Initially, a first metal is deposited on top of a substrate, and the first metal is patterned accordingly. A PVDF-TrFE nano fiber is then deposited on top of the first metal layer, and the PVDF-TrFE nano fiber is etched. A second metal layer is subsequently deposited on top of the PVDF-TrFE nano fiber, and the second metal layer is etched to form a pressure sensor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.