Low-offset Graphene Hall sensor
US10001529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2015 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Jan 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/85
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A Graphene Hall sensor (GHS) is provided with a modulated gate bias signal in which the modulated gate bias signal alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces approximately a same second conductivity state in the GHS. A bias current is provided through a first axis of the GHS. A resultant output voltage signal is provided across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency. An amplitude of the Hall voltage that does not include the offset voltage is extracted from the resultant output voltage signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.