Electron spin-based information shuttling for a computer system
US10002328B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Dec 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/27
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A silicon metal-oxide semiconductor device transports a spin-polarized single electron. An array of silicon quantum dot electrodes is arranged atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The array comprises at least a first electrode and a second electrode adjacent to the first electrode. A transport control logic for individually controls a voltage applied to the electrodes. The transport control logic is configured to gradually decrease a voltage at the first electrode while gradually increasing a voltage at the second electrode. Localization of the single electron is adiabatically transferred from the first electrode to the second electrode while maintaining a desired energy gap between a ground state and a first excited state of the single electron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.