Mechanisms for forming semiconductor device structure with feature opening
US10002790B2 · kind B2 · utility
2Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Aug 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a semiconductor substrate and forming a hard mask layer over the material layer. The hard mask layer contains metal. The method also includes forming an opening in the hard mask layer using a plasma etching process, and a gas mixture used in the plasma etching process includes a nitrogen-containing gas, a halogen-containing gas, and a carbon-containing gas. The method further includes etching the material layer through the opening in the hard mask layer to form a feature opening in the material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.