Method of fabricating a semiconductor device and semiconductor product
US10002836B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2015 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Feb 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor product including processing of a semiconductor wafer from a front surface including structures disposed in the substrate of the wafer adjacent to the front surface and forming a wiring embedded in a dielectric layer disposed on the front surface. The wafer is mounted to a carrier wafer at its front surface so that material can be removed from the backside of the wafer to thin the wafer. Backside processing of the wafer includes forming implantations from the backside, forming deep trenches to isolate the structures from other structures within the wafer, forming a through-silicon via to contact features on the frontside of the wafer, and forming a body contact. Several devices can be generated within the same wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.