Semiconductor device
US10002884B2 · kind B2 · utility
0Cited by
28References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2017 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | May 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.