Methods for forming thermoelectric elements
US10003004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2015 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Apr 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for forming a thermoelectric device, comprising providing a semiconductor substrate and providing a first layer of an etching material adjacent to the semiconductor substrate. The etching material facilitates the etching of the semiconductor substrate upon exposure to an oxidizing agent and a chemical etchant. Next, a second layer of a semiconductor oxide is provided adjacent to the first layer, and the second layer is patterned to form a pattern of holes or wires. The second layer and first layer are then sequentially etched to expose portions of the semiconductor substrate. Exposed portions of the semiconductor substrate are then contacted with an oxidizing agent and a chemical etchant to transfer the pattern to the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.