Patent · US Active

Method for producing an organic semiconductor device

US10005879B2 · kind B2 · utility

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18Claims

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Assignee

BASF SE

Inventors

Subramanian Vaidyanathan · Basel, CH
Marcel Kastler · Mannheim, DE
Bertha Tan · Hong Kong, CN
Mi Zhou · Lo Wu, CN

Key dates

Filing date	Feb 3, 2012
Grant date	Jun 26, 2018
Priority date	—
Expiry date	Dec 12, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10K10/484
WIPO fieldMacromolecular chemistry, polymers
WIPO sectorChemistry

Abstract

A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer (120) an ambipolar charge carrier transport between the electrodes (114) is suppressed in favor of a unipolar charge carrier transport.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.