Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US10006910B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 2, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Sep 2, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4146
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This invention concerns Chemically-sensitive Field Effect Transistors (ChemFETs) that are preferably fabricated using semiconductor fabrication methods on a semiconductor wafer, and in preferred embodiments, on top of an integrated circuit structure made using semiconductor fabrication methods. The instant ChemFETs typically comprise a conductive source, a conductive drain, and a channel composed of a one-dimensional (1D) or two-dimensional (2D) transistor nanomaterial, which channel extends from the source to the drain and is fabricated using semiconductor fabrication techniques on top of a wafer. The ChemFET also includes a gate, often the gate voltage is provided through a fluid or solution proximate the ChemFET. Such ChemFETs, preferably configured in independently addressable arrays, may be employed to detect a presence and/or concentration changes of various analyte types in chemical and/or biological samples, including nucleic acid hybridization and/or sequencing reactions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.