Photoresist composition and method of manufacturing semiconductor device using the same
US10007182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Oct 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3081
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a photoresist composition and a method of manufacturing a semiconductor device using the same. The method of manufacturing a semiconductor device comprises forming a mask layer and a photoresist layer on a substrate, forming a photoresist pattern by patterning the photoresist layer, forming a mask pattern by patterning the mask layer through the photoresist pattern and forming a pattern by etching the substrate using the mask pattern, wherein the formation of the photoresist layer comprises forming the photoresist layer, using a photoresist composition comprising a polymer which includes a protecting group that causes decarboxylation by radical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.