Method for computer modeling and simulation of negative-tone-developable photoresists
US10007191B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Aug 20, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In some embodiments, a method may include improving a development process of a photoresist. The method may include simulating a negative-tone development process of a photoresist. The method may include determining a reaction of a developer with a soluble photoresist surface. Determining the reaction of the developer may include applying a reaction rate constant at a power of a reaction order to a blocked polymer concentration to yield a resist dissolution rate of soluble resist comprising the dissolution-limited regime of development. The method may include determining a flux of the developer into exposed and partially soluble resist. Determining the flux of the developer may include applying a vector valued diffusion coefficient of the developer dependent upon the blocked polymer concentration to a gradient of developer concentration to an expansion rate of insoluble resist comprising the expansion-controlled regime of development. The method may include optimizing an illumination source and a mask on a full chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.