Determining proximity effect parameters for non rectangular semiconductor structures
US10007752B2 · kind B2 · utility
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5References
17Claims
0Family size
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Key dates
| Filing date | Jul 20, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Jul 20, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a curve-fitting procedure for determining proximity effect device parameters in semiconductor fabrication. Methods presented herein are adapted to determine the impact of narrow width related effects on device characteristics by comparing two-dimensional (2D) and/or three-dimensional (3D) device simulations. Methods presented herein are adapted to determine the accuracy of conventional extraction methods utilizing non-rectangular gate device simulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.