Field-effect transistor, display element, image display device, and system
US10008181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2017 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Mar 8, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2320/0646
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.