Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque
US10008248B2 · kind B2 · utility
33Cited by
10References
23Claims
0Family size
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Key dates
| Filing date | Jul 17, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Jul 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Devices or circuits based on spin torque transfer (STT) and Spin Hall effect are disclosed by using a spin Hall effect (SHE) metal layer coupled to a magnetic free layer for various applications. The efficiency or strength of the STT effect based on this combination of SHE and STT can be enhanced by an interface modification between the SHE metal layer and the magnetic free layer or by modifying or engineering the SHE metal layer by doping the SHE metal with certain impurities or other means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.