Semiconductor device
US10008433B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | May 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor chip formed using a silicon carbide and having electrodes on a first surface and a second surface opposite to the first surface, a terminal disposed adjacent to the first surface and connected to the electrode on the first surface through a bonding member, and a heat sink disposed adjacent to the second surface and connected to the electrode on the second surface through a bonding member. The first surface is a (0001) plane and a thickness direction of the semiconductor chip corresponds to a [0001] direction. Of the distances between the end portions of the semiconductor chip having a square two-dimensional shape and the end portions of the terminal having a rectangular two-dimensional shape, the shortest distance L1 in a [1-100] direction is shorter than the shortest distance L2 in a [11-20] direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.