Semiconductor device capable of realizing impedance control and method of manufacturing the same
US10008458B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 16, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Jun 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device capable of realizing impedance control of the semiconductor device.An input/output wiring line 23 and a ground wiring line 22 are such that through glass vias are provided so as to form a strip line structure by blasting or electric discharge machining and thereafter metal films are formed on a surface and a rear surface. It is possible to configure the semiconductor device with the impedance control by adjusting a conductor diameter of the input/output wiring line 23 and an insulating layer thickness between the input/output wiring line 23 and the ground wiring line 22. The present technology may be applied to the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.