Solid-state imaging device, method of manufacturing the same, and electronic apparatus
US10008529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Sep 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.