Thin film transistor and organic EL display device
US10008611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Jun 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes: a substrate; an undercoat layer disposed on the substrate; an oxide semiconductor layer formed above the undercoat layer and including at least indium; a gate insulating layer located opposite the undercoat layer with the oxide semiconductor layer being between the gate insulating layer and the undercoat layer; a gate electrode located opposite the oxide semiconductor layer with the gate insulating layer being between the gate electrode and the oxide semiconductor layer; and a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the undercoat layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.