Semiconductor light-emitting element
US10008635B2 · kind B2 · utility
2Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Jun 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
Abstract
Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a non-conductive reflective film which is formed on the plurality of semiconductor layers; and first and second electrodes formed on the non-conductive reflective film, wherein a spacing between the first electrode and the second electrode is 80 μm or greater, and a ratio of a combined area of the first and second electrodes to a planform area of the semiconductor light emitting device as seen on a top view is 0.7:1 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.