Method for forming and processing antiperovskite material doped with aluminum material
US10008736B2 · kind B2 · utility
14Cited by
1References
5Claims
0Family size
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Key dates
| Filing date | Oct 23, 2013 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | May 17, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is related to formation and processing of antiperovskite material. In various embodiments, a thin film of aluminum doped antiperovskite is deposited on a substrate, which can be an electrolyte material of a lithium-based electrochemical storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.