High dynamic range image sensor
US10009558B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Mar 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8027
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to an image sensor including: a plurality of pixels, each including a first photodiode coupled to a first capacitive charge storage node by a first transistor, and a second photodiode coupled to a second capacitive charge storage node by a second transistor; and a control circuit configured so as to, during a phase of acquisition of a value representative of the illumination level of a pixel: acquire a first output value representative of the illumination level received by the first photodiode during a first uninterrupted integration period; and acquire a second output value representative of the illumination level received by the second photodiode during a second integration period divided into a plurality of separate sub-periods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.