Patent · US Active

Plasma etching of diamond surfaces

US10011491B2 · kind B2 · utility

16Cited by
16References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 13, 2015
Grant dateJul 3, 2018
Priority date
Expiry dateMay 14, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24355
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.