Plasma etching of diamond surfaces
US10011491B2 · kind B2 · utility
16Cited by
16References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 13, 2015 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | May 14, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.