Method for producing dry etching gas
US10011553B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2013 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Nov 12, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07C51/64
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Provided is a method for producing fluoromethane and 3,3,3-trifluoro-2-(trifluoromethyl)propanoyl fluoride ((CF3)2CHCOF), which are useful as dry etching gases etc., safely and inexpensively with high purity.According to the method in which 1,1,3,3,3-pentafluoro-2-trifluoromethylpropyl methyl ether is pyrolyzed in a gas phase in the presence of a catalyst, the desired fluoromethane and 3,3,3-trifluoro-2-(trifluoromethyl)propanoyl fluoride can be obtained with high selectivity and high conversion of the starting material by a simple process in which a pyrolysis reaction is performed in a gas phase using the inexpensive starting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.