Semiconductor device including a silicon nitride dielectric layer and method for producing same
US10012883B2 · kind B2 · utility
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Key dates
| Filing date | Feb 2, 2015 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Feb 2, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device (100A) includes a substrate (11); a TFT (10A) supported on the substrate, the TFT including an oxide semiconductor layer (16); an organic insulating layer (24) covering the TFT; a lower layer electrode (32) on the organic insulating layer; a dielectric layer (34) on the lower layer electrode; an upper layer electrode on the dielectric layer; and an upper layer electrode (36) including a portion opposing the lower layer electrode via the dielectric layer. The dielectric layer is a silicon nitride film having a hydrogen content of 5.33×1021 atoms/cm3 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.