Method of correcting mask pattern and method of manufacturing reticle
US10012900B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2016 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Jul 25, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70875
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a reticle, the method including preparing a substrate, determining position data of a pattern to be formed on the substrate, and setting a primary exposure condition to form the pattern; performing a primary exposure simulation regarding the substrate based on the position data of the pattern and the primary exposure condition; calculating a primary deformation rate of the substrate, which is generated in the primary exposure simulation; correcting the position data of the pattern based on the primary deformation rate of the substrate to provide a corrected position data of the pattern; and exposing the substrate under the primary exposure condition based on the corrected position data of the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.