SiC substrate treatment method
US10014176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2015 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Nov 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) that has, on its surface, grooves (41), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate (40) is heated under Si vapor pressure is performed to the SiC substrate (40) has, on its surface, an ion implantation region (46) in which ions have been implanted, and has the grooves (41) provided in a region including at least the ion implantation region (46), thereby ions that are implanted in the SiC substrate (40) is activated while etching the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.